APT19M120J

Single FETs, MOSFETs Overview

The APT19M120J is a single N-channel power MOSFET module manufactured by Microchip Technology. It features a 1200 V drain-source breakdown voltage and a continuous drain current of 19 A at case temperature. The device utilizes silicon technology and is housed in an SOT-227-4 (miniBLOC) package with screw mount installation style. Key electrical parameters include a maximum gate-emitter voltage of ±30 V, a power dissipation rating of 545 W at case temperature, and an operating junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1200 V drain-source breakdown voltage for robust switching applications
• Integrated thermal management design supporting high power dissipation ratings
• Screw-mount construction in SOT-227-4 package for secure chassis integration

Single FETs, MOSFETs Applications

• Industrial motor drives
• Power supply inverters
• Chassis-mounted switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'J' against the official Microchip datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides the original manufacturer datasheet for technical validation. Confirm that the SOT-227-4 package dimensions match your mechanical constraints. Check for any product change notifications that may affect performance specifications or material composition prior to finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a single-switch configuration with high voltage blocking capability is required. The 19 A continuous current rating suits moderate-power industrial loads. Consider the SOT-227-4 package for its thermal performance and mechanical stability in chassis-mounted designs. Evaluate the 1200 V rating against system peak voltages to ensure adequate safety margins during transient events.

Single FETs, MOSFETs Part Context

This part belongs to the ISOTOP family of discrete semiconductor modules from Microchip Technology. These modules are designed for high-reliability power electronics applications requiring efficient heat transfer and robust packaging. The series typically offers optimized on-resistance and switching characteristics for silicon-based power systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1200 V rating, 19 A current capacity, and SOT-227-4 package. Verify pin compatibility and thermal resistance values before substitution.