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The APT200GN60J is a single IGBT module manufactured by Microchip Technology, utilizing silicon fieldstop technology. It features a 600 V collector-emitter voltage rating and a continuous collector current of 283 A at 25°C. The device operates within a temperature range of -55°C to +175°C and has a power dissipation capacity of 682 W. Packaged in an ISOTOP SOT-227-4 screw-mount configuration, it exhibits a collector-emitter saturation voltage of 1.5 V and a maximum gate-emitter voltage of 20 V.
Verify the specific revision level and RoHS compliance status through official Microchip documentation before procurement. Confirm that the SOT-227-4 package dimensions align with your thermal management and mounting infrastructure requirements. Ensure proper handling procedures are followed due to the sensitivity of semiconductor components during installation.
Select this component when a single IGBT with high current capability and low saturation voltage is required. The 600 V rating suits medium-voltage AC/DC conversion tasks. Consider the 283 A continuous current limit and 682 W power dissipation against your thermal design constraints. Verify compatibility with standard gate drive voltages up to 20 V.
This part belongs to the APT series of IGBT modules from Microchip Technology, designed for general-purpose power switching. The ISOTOP packaging provides a standardized footprint for efficient heat sinking. It complements other devices in the family offering different current ratings or voltage classes for scalable power system designs.
Direct substitutes include the APT150GN60J for lower current requirements or the APT2X60DQ60J for dual configurations. Verify pinout compatibility and thermal resistance values when considering alternative packages or manufacturers.