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Product Detailed Parameters
- Description：IGBT MODULE 1200V 15A 80W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 10A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：15 A
- Power - Max：80 W
- Current - Collector Cutoff (Max)：400 µA
- Input Capacitance (Cies) @ Vce：530 pF @ 25 V
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Overview
The BSM10GD120DN2E3224BOSA1 is a high-voltage IGBT module manufactured by Infineon Technologies. It belongs to the BSM10 series and features a 1200 V collector-emitter breakdown voltage with a continuous collector current rating of 10 A at 25°C. The device utilizes an insulated gate bipolar transistor technology optimized for low conduction losses. Key electrical parameters include a maximum DC collector current of 10 A, a pulsed collector current capability of 20 A, and a typical on-state collector-emitter voltage of 2.1 V at 10 A. The module is designed for robust thermal performance with a junction temperature range up to 175°C.
Feature Summary
- High voltage insulation rated for 1200 V applications
- Optimized for low switching and conduction losses
- Robust short-circuit withstand capability
- Designed for compact power conversion modules
Applications
- Switching power supplies
- Motor drive inverters
- Uninterruptible power systems (UPS)
- Industrial inverter circuits
Procurement Notes
Verify the specific suffix E3224BOSA1 against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the exact pinout and thermal characteristics required for your PCB layout. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring 1200 V blocking capability with moderate current handling around 10 A. Consider the thermal resistance values provided in the datasheet for heatsink sizing. Evaluate the switching speed requirements against the turn-on and turn-off times specified for the target operating frequency.
Part Context
This module is part of Infineon's BSM series of small power IGBT modules. These components are engineered for cost-effective solutions in medium-power applications. The series offers a balance between performance and footprint, suitable for integration into various industrial and consumer electronic power stages.
Replacement Considerations
Check for direct replacements within the BSM10GD120DN2 family. Verify pin compatibility and thermal interface dimensions before substituting with other manufacturers' 1200 V 10 A IGBT modules.
