APT20F50B

Single FETs, MOSFETs Overview

The APT20F50B is a high-speed, high-voltage N-channel FREDFET switch-mode power MOSFET manufactured by Microsemi. It features an optimized drain-source body diode for high reliability in ZVS phase-shifted bridge circuits through reduced reverse recovery time and soft recovery characteristics. The device offers low gate charge, high gain, and a greatly reduced Crss/Ciss ratio for excellent noise immunity and low switching loss. It is housed in a TO-247 package with a maximum on-resistance of 0.30 ohms.

Single FETs, MOSFETs Feature Summary

• Optimized body diode for high reliability in ZVS phase-shifted bridge applications
• Fast switching performance with low electromagnetic interference (EMI)
• Ultra-low reverse transfer capacitance for improved noise immunity
• Avalanche energy rated capability

Single FETs, MOSFETs Applications

• ZVS phase shifted and other full bridge converters
• Half bridge topologies
• PFC and boost converters
• Buck converters
• Single and two switch forward converters
• Flyback converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type, as the 'B' designation corresponds to the TO-247 package while other suffixes may indicate different form factors. Ensure compatibility with the required thermal management solutions given the junction-to-case thermal resistance specifications. Confirm RoHS compliance status if environmental regulations apply to the final assembly. Cross-reference the datasheet revision date to ensure all electrical parameters match current manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency switching applications requiring low EMI and high noise immunity due to its poly-silicon gate structure. Consider the avalanche energy rating when designing circuits prone to inductive load switching transients. Evaluate the thermal impedance curves against the expected duty cycle and pulse duration to ensure safe operating area limits are not exceeded during peak current conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS 8 family of high-speed, high-voltage N-channel switch-mode power MOSFETs. The FREDFET variant specifically targets applications where the intrinsic body diode's reverse recovery characteristics are critical for system efficiency and reliability. It serves as a robust alternative to discrete diode-MOSFET combinations in hard-switching or resonant topologies.

Single FETs, MOSFETs Replacement Considerations

APT20F50S

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current at a case temperature of 100°C?

The maximum continuous drain current is 13 Amperes when the case temperature is maintained at 100°C.

How does the poly-silicon gate structure affect switching performance?

The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in lower electromagnetic interference (EMI) and enabling reliable paralleling even at very high frequencies.