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APT20M11JLL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 200V 176A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT20M11JLL
- Description：MOSFET N-CH 200V 176A ISOTOP
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：176A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：11mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id：5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：10320 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT20M11JLL
Single FETs, MOSFETs Overview
The APT20M11JLL is an N-channel MOSFET module from Microchip Technology, utilizing MOS 7 technology. It features a 200 V drain-source breakdown voltage and a maximum on-state resistance of 11 mΩ. The device supports a continuous drain current of 176 A at case temperature and handles up to 694 W of power dissipation. It operates within a junction temperature range of -55°C to +150°C and includes a gate-source threshold voltage of 3 V. The component is housed in a SOT-227-4 package designed for chassis mounting.
Single FETs, MOSFETs Feature Summary
- Utilizes MOS 7 silicon technology for high-performance switching
- Designed for chassis mount installation via screw terminals
- Provides single N-channel configuration with low on-state resistance
Single FETs, MOSFETs Applications
- Industrial motor drives
- Power supply inverters
- Chassis-mounted power conversion systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and revision level against the official Microchip Technology datasheet before procurement. Confirm that the SOT-227-4 footprint matches the target PCB or chassis design requirements. Ensure thermal management solutions are adequate for the specified 694 W power dissipation capability under actual operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a robust N-channel MOSFET with 200 V rating and 11 mΩ Rds(on) is required for high-current applications. The SOT-227 package suits chassis-mount designs where direct heatsinking is necessary. Consider the 176 A continuous current rating relative to the thermal environment and duty cycle of the intended application.
Single FETs, MOSFETs Part Context
This part belongs to the Microchip Power MOSFET module family, specifically leveraging MOS 7 technology. It is distinct from discrete packages by offering higher current handling through its SOT-227 form factor. The module integrates the semiconductor die with a metal baseplate for efficient heat transfer to external cooling structures.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent modules with matching voltage, current, and package dimensions. Verify pin compatibility and thermal characteristics before replacing existing units in established designs.
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