APT20M22LVRG

Single FETs, MOSFETs Overview

The APT20M22LVRG is a single N-channel silicon power MOSFET manufactured by Microchip Technology. It features a TO-264-3 through-hole package with a drain-source breakdown voltage (Vds) of 200 V and a continuous drain current (Id) of 100 A. The device exhibits a maximum on-resistance (Rds(on)) of 22 mΩ at specified gate-source voltages. Key electrical parameters include a gate charge (Qg) of 435 nC, a threshold voltage (Vgs(th)) of 2 V, and a power dissipation rating of 520 W. Switching characteristics specify a typical turn-on delay of 16 ns, turn-off delay of 48 ns, rise time of 25 ns, and fall time of 5 ns. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-current capability with 100 A continuous drain current rating for robust power handling.
• Low conduction losses achieved through a minimized 22 mΩ on-resistance in the 200 V class.
• Fast switching performance characterized by low gate charge and rapid transition times.
• Enhanced thermal stability supporting operation up to a maximum junction temperature of 150°C.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converter topologies requiring low conduction loss.
• Motor control systems utilizing high-current switching stages.
• Industrial power supply designs operating within the 200 V voltage range.
• Inverter circuits in renewable energy or industrial drive applications.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the official Microchip datasheet to ensure correct packaging and temperature grade specifications. Confirm that the TO-264-3 footprint matches your PCB design requirements. Check for any recent product change notifications regarding pinout or material composition updates before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V N-channel MOSFET with high current capacity is required. The 22 mΩ Rds(on) offers a balance between conduction loss and cost for medium-voltage applications. Ensure the gate driver can supply sufficient current to manage the 435 nC gate charge effectively. Verify that the thermal management solution can handle the 520 W dissipation rating under worst-case operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of Power MOSFETs from Microchip Technology, designed for general-purpose power switching applications. The series utilizes advanced silicon planar technology to achieve high reliability and performance. The TO-264-3 package provides a robust mechanical connection suitable for through-hole mounting in high-power modules.

Single FETs, MOSFETs Replacement Considerations

Consult the official Microchip cross-reference documentation for verified substitute part numbers. Do not assume compatibility based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.