ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
APT20M38SVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 200V 67A D3PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT20M38SVRG
- Description：MOSFET N-CH 200V 67A D3PAK
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：225 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：6120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D3PAK
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for APT20M38SVRG
Single FETs, MOSFETs Overview
The APT20M38SVRG is a surface-mount N-channel power MOSFET from Microchip Technology, housed in a D3PAK-3 (TO-268) package. It features a drain-source voltage rating of 200 V and a maximum continuous drain current of 56 A at case temperature. The device exhibits a typical on-resistance of 38 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge of 195 nC and an input capacitance of 4860 pF. It operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Integrated fast-recovery body diode for efficient switching applications
- Low on-resistance design optimized for conduction loss reduction
- Robust avalanche energy capability for rugged operation
Single FETs, MOSFETs Applications
- High-frequency DC-DC converters
- Motor control circuits
- Power factor correction stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official Microchip documentation to confirm tape and reel packaging requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to ordering. Ensure thermal management aligns with the specified package capabilities.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 200 V blocking voltage with moderate current handling. Evaluate the 38 mΩ on-resistance against system efficiency targets. Consider the TO-268 package for its balance of thermal performance and surface-mount convenience compared to through-hole alternatives.
Single FETs, MOSFETs Part Context
This part belongs to the Power MOS V® series by Microchip Technology. It utilizes silicon planar technology designed for high-speed switching. The D3PAK-3 package provides a compact form factor suitable for automated assembly processes in modern power electronics manufacturing.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure any replacement matches the 200 V rating, TO-268 footprint, and electrical parameters.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
