APT20N60SC3G

$3.80

Description：MOSFET N-CH 600V 20.7A D3PAK
Series：CoolMOS™
Mfr：Microsemi Corporation
Package：Tube

SKU:8295ff4c223e Category: Single FETs, MOSFETs Brand: Microsemi Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APT20N60SC3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 600V 20.7A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT20N60SC3G

Description：MOSFET N-CH 600V 20.7A D3PAK
Series：CoolMOS™
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id：3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2440 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D3PAK
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT20N60SC3G

APT20N60SC3G

Single FETs, MOSFETs Overview

The APT20N60SC3G is a Super Junction MOSFET manufactured by Microsemi Corporation, housed in a TO-247 package. It features a drain-source breakdown voltage of 600V and a continuous drain current of 20.7A at 25°C case temperature. The device exhibits an ultra-low on-state resistance (RDS(on)) of 0.19Ω maximum at VGS=10V. Key electrical parameters include a gate threshold voltage ranging from 2.1V to 3.9V, total power dissipation of 208W, and a junction temperature range of -55°C to 150°C. Dynamic characteristics specify a total gate charge of 90nC typical and input capacitance of 2440pF.

Single FETs, MOSFETs Feature Summary

Utilizes Super Junction technology for ultra-low on-state resistance and low Miller capacitance.
Rated for repetitive avalanche energy to withstand transient overcurrent conditions.
Features ultra-low gate charge to minimize switching losses and drive requirements.

Single FETs, MOSFETs Applications

High-frequency power conversion circuits
Inductive load switching applications
Resistive switching power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'SC3' against official Microsemi documentation to confirm exact tolerance or screening levels, as ordering suffixes may alter functional specifications. Ensure electrostatic discharge handling procedures are followed during procurement and assembly due to device sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage capability with minimized conduction losses. The TO-247 package facilitates efficient thermal management via direct heatsinking. Evaluate the 0.19Ω RDS(on) and 90nC gate charge against system efficiency targets and available gate drive voltage capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the APT20N60xC3G series of CoolMOS devices developed by Infineon Technologies AG, distributed by Microsemi. The series includes variants such as APT20N60BC3 and APT20N60SC3, all sharing the same core Super Junction architecture within the TO-247 form factor.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include APT20N60BC3 and APT20N60SC3. Verify pinout compatibility and thermal resistance values when replacing with other manufacturers' 600V TO-247 MOSFETs.