APT20SCD120B

Description：DIODE SILICON CARBIDE 1200V 68A
Series：-
Mfr：Microsemi Corporation
Package：Tube

SKU:66c63ff119ff Category: Single Diodes Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：DIODE SILICON CARBIDE 1200V 68A
Series：-
Mfr：Microsemi Corporation
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：68A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 20 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：400 µA @ 1200 V
Capacitance @ Vr, F：1135pF @ 0V, 1MHz
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Operating Temperature - Junction：-55°C ~ 150°C
Grade：-
Qualification：-

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APT20SCD120B

Overview

The APT20SCD120B is a Silicon Carbide Schottky diode manufactured by Microsemi Corporation. It features a maximum DC reverse voltage of 1200 V and a forward current rating of 68 A at 25°C case temperature, decreasing to 20 A at 135°C. The device exhibits zero reverse recovery time and low leakage current. Forward voltage is typically 1.8 V at 20 A and 25°C. Junction capacitance is 1135 pF at 0 V bias. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

Zero reverse recovery time for high-frequency switching
Low forward voltage drop for efficiency
Low leakage current across operating temperatures
Available in TO-247 or D3PAK packages

Applications

Anti-parallel diode in switchmode power supplies
Inverter circuits
Power factor correction (PFC)

Procurement Notes

Verify the specific package configuration required for your design, as the component is available in both TO-247 and surface mount D3PAK variants. Confirm that the manufacturer's datasheet specifications align with your thermal management requirements, particularly regarding derating at elevated case temperatures. Ensure compliance with any applicable environmental standards before finalizing procurement.

Selection Notes

Select this component for applications requiring fast switching speeds without snubber circuits. Consider the thermal resistance and power dissipation limits when designing heat sinks. Evaluate the forward voltage characteristics against system efficiency targets. Verify that the peak repetitive reverse voltage meets the circuit's maximum voltage stress conditions.

Part Context

This silicon carbide Schottky diode belongs to Microsemi's high-reliability discrete semiconductor lineup. It utilizes advanced SiC technology to achieve superior performance compared to traditional silicon rectifiers. The product is designed to minimize system complexity by eliminating the need for snubbers in many high-frequency applications.