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APT20SCD120S
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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 68A D3PAK
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：68A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：400 µA @ 1200 V
- Capacitance @ Vr, F：1135pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：D3PAK
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The APT20SCD120S is a Silicon Carbide Schottky diode manufactured by Microsemi Corporation, housed in a surface-mount D3PAK package. It features a maximum DC reverse voltage of 1200 V and supports a forward current of 68 A at 25°C case temperature. The device exhibits zero reverse recovery time and a typical forward voltage of 1.8 V at 20 A. Junction capacitance measures 1135 pF at 0 V bias. Operating junction temperatures range from -55°C to 150°C.
Feature Summary
- Zero reverse recovery time eliminates switching losses associated with minority carrier recombination.
- Low leakage current contributes to improved system efficiency under high-temperature conditions.
- Surface mount D3PAK package design facilitates automated assembly and compact board layouts.
Applications
- Anti-parallel diode configuration in switchmode power supplies
- Power factor correction circuits
- Inverter applications
Procurement Notes
Verify the specific suffix 'S' confirms the D3PAK surface mount package variant rather than the through-hole TO-247 option. Confirm component availability status as distribution listings indicate this part may be discontinued or obsolete. Ensure final application testing validates thermal performance within specified junction limits.
Selection Notes
Select this component for designs requiring high-frequency operation without snubber networks due to zero recovery characteristics. Evaluate thermal resistance requirements against the 0.6 °C/W junction-to-case rating. Compare forward voltage specifications against silicon alternatives to determine overall system efficiency gains.
Part Context
This component belongs to the Microsemi family of zero-recovery Silicon Carbide Schottky diodes. The 'S' suffix specifically denotes the D3PAK surface mount packaging, distinguishing it from the TO-247 leaded version designated by the 'B' suffix. Both variants share identical electrical ratings and semiconductor properties.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing PCB footprints if considering alternative manufacturers offering similar SiC Schottky diodes in D3PAK packages.
