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Product Detailed Parameters
- Description：IGBT PT 900V 72A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：72 A
- Current - Collector Pulsed (Icm)：110 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 25A
- Power - Max：417 W
- Switching Energy：370µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：13ns/55ns
- Test Condition：600V, 40A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT25GP90BDQ1G is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and belongs to the POWER MOS 7® Combi series, integrating an IGBT with a Fast Recovery Anti-Parallel Diode (FRD). The device features a Through-Hole mounting style in a TO-247 package. Key electrical parameters include a maximum Collector-Emitter Voltage (Vceo) of 900 V and a continuous Collector Current (Ic) of 25 A. The typical Collector-Emitter Saturation Voltage (Vce(sat)) is specified at 3.2 V.
Feature Summary
- Integrates a high-voltage IGBT with a complementary Fast Recovery Anti-Parallel Diode (FRD) for efficient switching applications.
- Utilizes POWER MOS 7® Combi technology to optimize switching performance and reduce conduction losses.
- Designed for robust operation with a standard gate input configuration suitable for direct drive from standard gate drivers.
Applications
- High-frequency power switching circuits requiring integrated freewheeling diodes.
- Industrial motor drives and inverters operating within the 900 V voltage class.
- Uninterruptible Power Supplies (UPS) and DC-AC conversion systems.
Procurement Notes
Verify the specific ordering suffix against the official Microchip datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as these details are subject to change based on production schedules and regional availability.
Selection Notes
Select this component when a 900 V rating and 25 A continuous current capacity are required in a TO-247 package. Ensure the application's thermal management can handle the dissipation characteristics defined in the datasheet. Verify that the gate drive voltage levels are compatible with the standard input requirements of the POWER MOS 7® family.
Part Context
This part belongs to the APT series of discrete power semiconductors from Microchip Technology, specifically leveraging the POWER MOS 7® platform. This platform is engineered to provide improved switching speed and lower on-state voltage compared to previous generations, making it suitable for modern high-efficiency power conversion topologies.
Replacement Considerations
Direct pin-compatible replacements within the same voltage and current class should be sought from the Microchip APT series. Cross-brand substitutions require careful verification of Vce(sat), switching energies, and thermal resistance parameters to ensure circuit compatibility.
