APT25GR120B

Overview

The APT25GR120B is a silicon-based Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a single N-channel configuration housed in a TO-247-3 package designed for through-hole mounting. The device supports a collector-emitter maximum voltage of 1200 V and delivers a continuous collector current of 85 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a gate-emitter leakage current of 250 nA, and a power dissipation rating of 962 W. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• High-voltage capability with 1200 V blocking
• Robust thermal performance up to 150°C junction temperature
• Through-hole mounting for high-power applications

Applications

• Industrial motor drives
• Power supply inverters
• Welding equipment

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status directly from manufacturer documentation before integration. Ensure ordering quantities align with tube packaging standards typical for this discrete IGBT form factor.

Selection Notes

Select this component for circuits requiring 1200 V isolation and high current handling. Compare the 3.5 V saturation voltage against system efficiency targets. Verify that the TO-247-3 footprint matches the PCB layout constraints and thermal management requirements of the target design.

Part Context

This part belongs to the APT series of silicon IGBTs from Microchip Technology. It serves as a high-power switching element distinct from MOSFET or SiC alternatives. The TO-247-3 package provides mechanical stability and efficient heat transfer for industrial-grade electronics.

Replacement Considerations

Consult official substitution guides for equivalent 1200 V, 85 A IGBTs in TO-247 packages. Verify pin compatibility and thermal resistance values before swapping manufacturers.