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Product Detailed Parameters
- Description：IGBT NPT 1200V 75A TO-247
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
- Power - Max：521 W
- Switching Energy：742µJ (on), 427µJ (off)
- Input Type：Standard
- Gate Charge：203 nC
- Td (on/off) @ 25°C：16ns/122ns
- Test Condition：600V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The APT25GR120BD15 is a single NPT (Non-Punch-Through) IGBT manufactured by Microchip Technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. The device is housed in a TO-247-3 package with through-hole mounting. Key electrical parameters include a maximum power dissipation of 521 W, a gate-emitter voltage rating of ±30 V, and a pulsed collector current capability of 100 A. The operating temperature range spans from -55°C to +150°C.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust voltage blocking characteristics.
- Designed for high-power switching applications requiring reliable thermal performance.
- Single discrete configuration optimized for efficient circuit integration.
Applications
- Industrial motor drives
- Power supply units
- Inverter systems
Procurement Notes
Verify the specific datasheet version and technical specifications directly with Microchip Technology or authorized distributors before procurement. Ensure that the component meets all required electrical ratings and thermal management constraints for the intended application environment. Confirm package compatibility and mounting requirements during the design phase.
Selection Notes
Select this component for applications requiring high voltage isolation and significant current handling capabilities within a standard through-hole form factor. Consider the thermal dissipation requirements associated with the 521 W power rating and ensure adequate heatsinking solutions are implemented to maintain junction temperatures within the specified operational limits.
Part Context
This IGBT belongs to Microchip Technology's discrete transistor portfolio, specifically designed for medium to high-power electronic systems. The product line emphasizes reliability and performance in industrial environments, providing engineers with standardized components for building efficient power conversion and control circuits.
Replacement Considerations
Consult official Microchip Technology documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage ratings, current capacity, and package dimensions to ensure functional equivalence without compromising system safety or performance.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 1200 V.
What type of packaging does this component use?
The component utilizes a TO-247-3 package designed for through-hole mounting.
