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Product Detailed Parameters
- Description：IGBT NPT 1200V 75A D3PAK
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
- Power - Max：521 W
- Switching Energy：742µJ (on), 427µJ (off)
- Input Type：Standard
- Gate Charge：203 nC
- Td (on/off) @ 25°C：16ns/122ns
- Test Condition：600V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：D3PAK
- Grade：-
- Qualification：-
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Overview
The APT25GR120S is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a Non-Punch Through (NPT) technology design with a collector-emitter voltage of 1200 V and a continuous collector current rating of 75 A at 25°C. The device supports a pulsed collector current of 100 A and has a maximum power dissipation of 521 W. It utilizes a D3PAK surface-mount package and operates within a junction temperature range of -40°C to +150°C, with a gate-emitter voltage limit of ±30 V.
Feature Summary
- Non-Punch Through (NPT) field-stop technology for robust switching performance
- Surface-mount D3PAK package optimized for high-power density applications
- High thermal stability supporting operation up to 150°C junction temperature
Applications
- Industrial motor drives and inverters
- Uninterruptible Power Supplies (UPS)
- High-frequency welding equipment
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the specific revision status and RoHS compliance details directly with the manufacturer or authorized distributors, as production lifecycle stages may vary. Confirm that the D3PAK footprint matches your PCB layout requirements before finalizing orders. Ensure thermal management solutions are adequate for the 521 W dissipation rating under your specific operating conditions.
Selection Notes
Select this component when a surface-mount IGBT with 1200 V blocking capability and 75 A continuous current is required. The NPT technology offers improved short-circuit withstand capability compared to older punch-through designs. Consider the D3PAK package constraints regarding thermal resistance and mounting torque if replacing through-hole alternatives in existing high-power circuits.
Part Context
This part belongs to Microchip's discrete IGBT portfolio, specifically designed for medium to high-power industrial applications. It complements other devices in the series offering various voltage and current ratings. The APT25GR120S represents a transition toward more compact surface-mount solutions in power electronics, replacing larger through-hole packages while maintaining high performance.
Replacement Considerations
Direct pin-to-pin replacements should be verified against datasheet electrical characteristics. Potential substitutes include other 1200V/75A NPT IGBTs in D3PAK packages from Microchip or other manufacturers, provided they meet the same thermal and switching speed requirements.
