APT25SM120B

Single FETs, MOSFETs Overview

The APT25SM120B is a Silicon Carbide (SiC) N-Channel Power MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage rating of 1200 V and a continuous drain current of 25 A at case temperature. The device exhibits a maximum on-resistance of 140 mΩ, optimized for high-efficiency power switching applications. Designed for robust thermal performance, it supports junction temperatures up to 175°C and utilizes a TO-247 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Utilizes Silicon Carbide semiconductor technology for superior thermal conductivity and high-temperature operation capabilities
• Provides low on-state resistance to minimize conduction losses in high-frequency switching environments
• Features fast switching characteristics with minimal reverse recovery charge for improved system efficiency

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Uninterruptible power supply systems
• Industrial motor drives and inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status and datasheet version before integration, as component specifications may evolve. Confirm that the TO-247 footprint matches the target PCB design. Ensure thermal management solutions accommodate the device's power dissipation requirements under maximum load conditions. Check for any recent manufacturing changes or obsolescence notices from the supplier.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage handling with reduced switching losses compared to traditional silicon devices. Consider the 1200 V rating for medium-voltage industrial applications. Evaluate the thermal resistance characteristics against the available heatsinking infrastructure. Compare the gate charge parameters against the driving capability of the intended control circuitry to ensure reliable turn-on and turn-off transitions.

Single FETs, MOSFETs Part Context

This part belongs to Microsemi's portfolio of high-voltage discrete semiconductors. It represents the transition toward wide-bandgap materials in power electronics. The device complements other SiC offerings in the series, providing a balance between voltage blocking capability and current handling for compact power stages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the APT25GR120BD15. Verify pinout compatibility and thermal interface dimensions before swapping. Cross-reference electrical parameters such as Rds(on) and Vth to ensure equivalent performance in the existing circuit topology.