APT29F80J

Single FETs, MOSFETs Overview

The APT29F80J is an N-channel FREDFET MOS 8 power MOSFET manufactured by Microchip Technology. It features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 29 A to 31 A depending on the specific datasheet reference. The device utilizes an SOT-227 package with four leads. Key electrical parameters include a gate charge (Qg) of approximately 303 nC at 10 V, a threshold voltage (Vgs(th)) of 4 V, and a maximum power dissipation (Pd) of 543 W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High efficiency switching with very low switching and conduction losses
• Low gate charge for reduced gate drive power and faster operation
• Fast switching capabilities suitable for high-frequency applications

Single FETs, MOSFETs Applications

• High voltage DC-DC converters
• Resonant LLC converters
• Uninterruptible Power Supplies (UPS)
• Motor drives

Single FETs, MOSFETs Procurement Notes

Verify the exact pinout configuration against the official Microchip datasheet before integration, as SOT-227 packages can vary in terminal arrangement. Confirm thermal management requirements align with the 543 W power dissipation rating under your specific operating conditions. Ensure the gate drive voltage matches the specified 10 V test conditions for optimal performance characteristics.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage blocking capability above 600 V is required alongside fast recovery characteristics. The FREDFET technology offers superior performance compared to standard MOSFETs in hard-switching applications. Consider the SOT-227 package size for board space constraints and verify that the gate charge specifications meet your driver's current sourcing capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of FREDFET MOS 8 devices from Microchip Technology. These components are designed for high-voltage, high-speed switching applications. The series leverages advanced silicon technology to minimize losses while maintaining robust avalanche ruggedness. It serves as a replacement for older discrete solutions requiring similar voltage and current ratings.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-references within the Microchip APT series. Verify pin compatibility if substituting with other SOT-227 packaged MOSFETs. Ensure equivalent or better Vdss, Id, and Qg specifications are met by any alternative component.