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Product Detailed Parameters
- Description:DIODE MOD SIC 600V 40A SOT-227
- Series:-
- Mfr:Microsemi Corporation
- Package:Bulk
- Diode Configuration:2 Independent
- Technology:SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):600 V
- Current - Average Rectified (Io) (per Diode):40A
- Voltage - Forward (Vf) (Max) @ If:1.8 V @ 40 A
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):0 ns
- Current - Reverse Leakage @ Vr:800 µA @ 600 V
- Operating Temperature - Junction:-
- Mounting Type:Chassis Mount
- Package / Case:ISOTOP
- Supplier Device Package:SOT-227
- Grade:-
- Qualification:-
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Overview
The APT2X41DC60J is a Silicon Carbide (SiC) Schottky diode power module manufactured by Microsemi Corporation. It features an ISOTOP package designed for chassis mounting. The device contains two independent diode configurations within a single unit. Key electrical specifications include a maximum DC reverse voltage of 600 V and an average rectified current rating of 40 A per diode. The component exhibits no recovery time characteristics with forward currents exceeding 500 mA, indicating fast switching performance typical of SiC technology.
Feature Summary
- Utilizes Silicon Carbide (SiC) Schottky technology for high-temperature and high-frequency operation
- Features dual independent diode configuration in a single ISOTOP package
- Designed for direct chassis mounting to facilitate thermal management
Applications
- High-power DC-DC converters
- Industrial motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the ISOTOP package dimensions match the intended chassis mounting requirements. Ensure that the thermal interface material selection aligns with the module's heat dissipation needs. Cross-reference the part number with official Microchip/Microsemi catalogs to confirm current production status and availability constraints.
Selection Notes
Select this component for applications requiring high voltage blocking capabilities and significant current handling in a compact form factor. The SiC technology offers advantages over traditional silicon devices regarding switching losses and thermal stability. Consider the dual independent configuration for bridge or half-bridge topologies. Evaluate the chassis mount option against PCB-mounted alternatives based on space and cooling infrastructure.
Part Context
This part belongs to the family of SiC power modules from Microsemi, now part of Microchip Technology. These components are engineered for demanding power electronics environments where efficiency and reliability are critical. The ISOTOP packaging style is distinct for its low parasitic inductance and robust mechanical connection to heatsinks, supporting high-power density designs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip/Microsemi resources for compatible replacements or pin-compatible alternatives.
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