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APT2X50DC60J
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Product Detailed Parameters
- Description：DIODE MOD SIC 600V 50A SOT-227
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Diode Configuration：2 Independent
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 50 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：1 mA @ 600 V
- Operating Temperature - Junction：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Grade：-
- Qualification：-
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Overview
The APT2X50DC60J is a silicon carbide (SiC) rectifier power module manufactured by Microsemi. It features an ISOTOP-4 package with four terminals and contains two separate diode elements in a single-phase configuration. The device has a maximum non-repetitive peak forward current of 750 A and a maximum forward voltage (VF) of 1.8 V. It is designed for power applications, offering low noise characteristics with an isolated case connection.
Feature Summary
- Utilizes silicon carbide material for high-performance rectification
- Features an isolated case connection for thermal management
- Provides low noise operation suitable for sensitive power circuits
Applications
- Power electronics systems requiring high reliability
- Industrial power conversion modules
- High voltage rectification applications
Procurement Notes
Verify the specific datasheet version and RoHS compliance status before procurement. Confirm that the ISOTOP-4 package dimensions match your PCB footprint requirements. Ensure the supplier provides original manufacturer documentation to validate the part number authenticity and electrical specifications against official Microsemi records.
Selection Notes
Select this component when a silicon carbide solution is required for high-efficiency power applications. The dual-element configuration supports single-phase setups. Consider the 1.8 V forward voltage drop for thermal calculations. Verify that the 750 A peak current rating exceeds the system's transient requirements. Ensure the operating temperature range aligns with the application environment.
Part Context
This component belongs to Microsemi's portfolio of silicon carbide power modules. SiC technology offers superior performance compared to traditional silicon devices in high-temperature and high-voltage environments. The ISOTOP packaging style is designed for efficient heat dissipation through the base plate, making it suitable for robust industrial power applications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided data. Consult Microsemi technical support for direct replacements or cross-reference compatible SiC modules with matching voltage, current, and package specifications.
