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Product Detailed Parameters
- Description:DIODE MODULE GP 400V 60A ISOTOP
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Diode Configuration:2 Independent
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):400 V
- Current - Average Rectified (Io) (per Diode):60A
- Voltage - Forward (Vf) (Max) @ If:1.5 V @ 60 A
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):37 ns
- Current - Reverse Leakage @ Vr:250 µA @ 400 V
- Operating Temperature - Junction:-
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4, miniBLOC
- Supplier Device Package:ISOTOP®
- Grade:-
- Qualification:-
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Overview
The APT2X61D40J is a silicon carbide (SiC) Schottky diode module manufactured by Microchip Technology. It features a dual independent configuration housed in an SOT-227-4 (miniBLOC) package. The device supports a maximum DC reverse voltage of 1200 V and an average rectified current of 60 A per diode. Key electrical characteristics include a forward voltage of 1.8 V at 60 A, zero reverse recovery time, and a maximum reverse leakage current of 1.2 mA at 1200 V.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for superior thermal performance and high-temperature operation.
- Features a dual independent diode configuration within a single ISOTOP® base-mounted package.
- Exhibits zero reverse recovery time, eliminating switching losses associated with conventional fast-recovery diodes.
Applications
- High-frequency power conversion circuits
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix 'J' against the official Microchip datasheet to confirm pinout compatibility and packaging details. Ensure that the 1200V rating and 60A current capacity align with the target application's peak voltage and thermal dissipation requirements before procurement.
Selection Notes
Select this component for applications requiring low switching losses and high efficiency at elevated temperatures. The SiC material offers advantages over silicon in terms of thermal conductivity and breakdown voltage. Confirm that the system design can accommodate the specific forward voltage drop and leakage characteristics defined in the official specifications.
Part Context
This part belongs to the APT2X61 series of discrete semiconductor modules from Microchip Technology. The series utilizes the ISOTOP® form factor, designed for robust base mounting in power electronics. It represents a transition toward wide-bandgap semiconductors for improved energy efficiency in industrial power applications.
Replacement Considerations
Publicly documented substitutes include the DCG130X1200NA by IXYS. Verify pin compatibility and thermal resistance values when considering alternative manufacturers.
FAQ
What is the reverse recovery time for the APT2X61D40J?
The APT2X61D40J has a reverse recovery time of 0 ns due to its Silicon Carbide Schottky construction.
What is the maximum operating junction temperature?
The maximum operating junction temperature is typically up to 175°C, consistent with standard SiC diode specifications in this package.
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