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Product Detailed Parameters
- Description：IGBT MODULE 600V 58A 192W SOT227
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：NPT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：ISOTOP
- Supplier Device Package：SOT-227
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：58 A
- Power - Max：192 W
- Current - Collector Cutoff (Max)：40 µA
- Input Capacitance (Cies) @ Vce：1.85 nF @ 25 V
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Overview
The APT30GF60JU2 is a non-punch-through (NPT) THUNDERBOLT IGBT with an integrated anti-parallel diode, housed in an ISOTOP SOT-227 package. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 30 A at 100°C case temperature. The device exhibits a maximum collector-emitter saturation voltage of 2.8 V at 30 A and 125°C. Switching characteristics include a turn-off delay time up to 400 ns and fall time up to 80 ns under inductive switching conditions. The junction-to-case thermal resistance is 0.65 °C/W for the IGBT and 1.21 °C/W for the diode.
Feature Summary
- Non-punch-through THUNDERBOLT IGBT technology providing low voltage drop and low tail current
- Soft recovery parallel diodes with low forward voltage and leakage current
- ISOTOP SOT-227 isolated package enabling direct heatsink mounting with very low stray inductance
- Rated for RBSOA and SCSOA operation ensuring high ruggedness
Applications
- AC and DC motor control systems
- Switched Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Brake switch applications
Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm RoHS compliance status via the manufacturer's environmental documentation. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly due to device sensitivity.
Selection Notes
Select this component for designs requiring high-frequency operation up to 100 kHz with stable temperature behavior. Consider the positive temperature coefficient of VCE(sat) for easy paralleling requirements. Evaluate the 2500 Vrms isolation voltage for safety-critical isolated power applications.
Part Context
This part belongs to the Microsemi THUNDERBOLT family of NPT IGBTs. It utilizes the ISOTOP packaging technology designed for high integration and low stray inductance. The product line targets efficient power conversion in industrial and consumer electronics.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
Does the device support direct mounting to a heatsink?
Yes, the ISOTOP package allows for direct mounting to a heatsink while maintaining electrical isolation.
What is the RMS isolation voltage rating?
The RMS isolation voltage from any terminal to the case is 2500 V for 1 minute at 50/60 Hz.
