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The APT30GS60BRDQ2G is a single IGBT transistor manufactured by Microchip Technology, belonging to the Thunderbolt HS product family. It utilizes Field-Stop (FS) technology and is housed in a TO-247-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 50 A at 25°C. Key electrical parameters include a saturated collector-emitter voltage of 1.9 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 280 W. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official Microchip documentation to confirm exact electrical tolerances and packaging configurations. Ensure compatibility with existing thermal management solutions given the 280 W power dissipation rating. Confirm RoHS compliance status via the manufacturer's environmental declarations before integration into regulated assemblies.
Select this component for designs requiring a balance of low conduction loss and fast switching speeds. The 600 V rating suits medium-voltage AC/DC conversion systems. Evaluate thermal resistance requirements carefully, as the TO-247 package necessitates adequate heatsinking to maintain operation within the specified 150°C junction temperature limit under full load conditions.
This part belongs to the Thunderbolt HS series, which represents Microchip's high-speed IGBT lineup. The series is engineered for applications demanding superior switching capabilities compared to standard IGBTs. The 'DQ2' suffix typically denotes specific manufacturing lot or testing variations defined by the original supplier, Anpec Electronics, now part of Microchip.
Direct replacements may include other 600V 50A TO-247 IGBTs from the same Thunderbolt HS family, such as the APT30GS60BRDG. Verify pinout compatibility and thermal characteristics when substituting with devices from other manufacturers like Infineon or ON Semiconductor.