APT30M36JLL

Single FETs, MOSFETs Overview

The APT30M36JLL is a single N-channel enhancement mode Power MOSFET manufactured by Microchip Technology. It utilizes silicon technology and is housed in a SOT-227 through-hole package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 300 V, a continuous drain current (Id) of 84 A at 25°C, and a maximum on-resistance (Rds(on)) of 36 mΩ. The device supports a gate-source voltage range of ±30 V with a typical threshold voltage of 5 V. It features a gate charge of 115 nC and can dissipate up to 568 W of power. The component operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration for high-current switching applications
• Low on-resistance design optimized for conduction loss reduction
• Robust thermal performance with high power dissipation capability
• Through-hole mounting for secure mechanical attachment

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Motor control systems
• Power supply inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level and manufacturing date code against the latest product change notifications issued by Microchip Technology. Ensure that the ordering suffix matches the required packaging format. Confirm RoHS compliance status directly from the official datasheet or environmental declaration before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 300 V rating and low Rds(on) are required for high-current applications. The SOT-227 package provides a balance between current handling and thermal management. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speed without excessive drive losses.

Single FETs, MOSFETs Part Context

This part belongs to the Microsemi/Microchip Power MOSFET portfolio, specifically designed for general-purpose power switching. It represents a standard discrete solution within the broader category of silicon-based power transistors, offering a reliable alternative to integrated modules for single-switch implementations.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent parts with matching voltage, current, and package constraints. Verify pinout compatibility and thermal characteristics before implementing any cross-reference.