APT30SCD65B

Description：DIODE SIL CARBIDE 650V 46A TO247
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:647f8f4b9c84 Category: Single Diodes Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARBIDE 650V 46A TO247
Series：-
Mfr：Microsemi Corporation
Package：Bulk
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：46A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 30 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：600 µA @ 650 V
Capacitance @ Vr, F：945pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247
Operating Temperature - Junction：-55°C ~ 150°C
Grade：-
Qualification：-

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APT30SCD65B

Overview

The APT30SCD65B is a Silicon Carbide (SiC) Schottky Barrier Diode manufactured by Microsemi Corporation. It features a 650V DC reverse voltage rating and a 46A average rectified current capability. The device utilizes a TO-247 through-hole package, designed for high thermal conductivity and small footprint applications. Key electrical characteristics include zero reverse recovery time and a forward voltage of approximately 1.8V at 20A. The component operates within a junction temperature range of -55°C to 150°C and holds a Moisture Sensitivity Level (MSL) of 1.

Feature Summary

Zero reverse recovery charge enabling fast switching with minimal losses
High thermal conductivity silicon carbide construction
Small physical footprint suitable for compact designs

Applications

High-frequency power conversion circuits
Free-wheeling diodes in motor drives
Uninterruptible Power Supply (UPS) systems

Procurement Notes

This component is officially scheduled for obsolescence and discontinuation by the manufacturer. Verification of final availability and last-time buy status is required before procurement planning. Ensure compatibility with existing designs as this part may no longer be produced. Consult official Microchip documentation for specific discontinuance timelines and replacement recommendations.

Selection Notes

Select this component for applications requiring low reverse recovery losses and high-temperature operation. The SiC technology offers superior performance compared to standard silicon diodes in high-frequency environments. Consider the TO-247 package constraints for thermal management and PCB layout requirements when integrating into the system design.

Part Context

The APT30SCD65B belongs to Microsemi's family of Silicon Carbide Schottky Barrier Diodes. This series emphasizes efficiency and reliability in power electronics. The device represents an evolution in wide-bandgap semiconductor technology, providing enhanced performance metrics over traditional silicon counterparts in similar voltage and current ratings.