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Product Detailed Parameters
- Description：IGBT PT 900V 63A TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：63 A
- Current - Collector Pulsed (Icm)：105 A
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 18A
- Power - Max：290 W
- Switching Energy：642µJ (on), 382µJ (off)
- Input Type：Standard
- Gate Charge：84 nC
- Td (on/off) @ 25°C：12ns/104ns
- Test Condition：600V, 18A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT35GA90B is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon PT MOS technology and is housed in a TO-247 through-hole package. The device features a maximum collector-emitter voltage of 900 V and a continuous collector current of 63 A at 25°C. The collector-emitter saturation voltage is specified at 2.5 V, with a maximum power dissipation of 290 W. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Single IGBT configuration utilizing PT MOS technology for efficient switching performance
- Robust thermal management capabilities supporting high power dissipation levels
- Wide operating temperature range suitable for demanding industrial environments
Applications
- Industrial motor drives and control systems
- Switched-mode power supplies (SMPS)
- Inverter circuits for renewable energy applications
Procurement Notes
Verify the specific ordering suffix and manufacturing date code against the latest Microchip Technology datasheet to ensure component authenticity and compliance with current RoHS directives. Confirm that the TO-247 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a 900 V blocking voltage and 63 A continuous current rating are required for single-switch applications. Ensure the gate drive circuitry supports the standard input type and that the thermal design can handle the 290 W power dissipation limit under worst-case operating conditions.
Part Context
This part belongs to the Microchip APT series of discrete IGBTs, designed for medium-power switching applications. It represents a silicon-based solution offering a balance between conduction losses and switching speed, commonly used in legacy and modern industrial power electronics designs requiring reliable high-voltage switching.
Replacement Considerations
Direct pin-compatible replacements may include other 900V 35A-63A IGBTs in TO-247 packages from the same manufacturer or competitors, provided saturation voltage and switching energy parameters are verified against the application requirements.
