APT35GA90BD15

$4.99

Description：IGBT PT 900V 63A TO247
Series：-

SKU:f25fec7d30cb Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 900V 63A TO247
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：63 A
Current - Collector Pulsed (Icm)：105 A
Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 18A
Power - Max：290 W
Switching Energy：642µJ (on), 382µJ (off)
Input Type：Standard
Gate Charge：84 nC
Td (on/off) @ 25°C：12ns/104ns
Test Condition：600V, 18A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT35GA90BD15

Overview

The APT35GA90BD15 is a Power MOS 8™ Punch-Through IGBT manufactured by Microchip Technology. It features a 900 V collector-emitter breakdown voltage and a continuous collector current of 35 A at 25°C, with a typical saturation voltage of 2.5 V. The device is housed in a TO-247 package and is co-packaged with a DQ series fast recovery diode. Designed for high-efficiency switching applications, it operates within a junction temperature range up to 150°C.

Feature Summary

Power MOS 8™ Punch-Through technology optimized for high efficiency and low switching losses
Co-packaged with a high-speed DQ series anti-parallel diode for improved commutation ruggedness
Quiet switching characteristics achieved through specific input and reverse transfer capacitance tuning

Applications

High-frequency power factor correction circuits
Server and telecom power systems
Solar inverters and semiconductor capital equipment
Induction heating and plasma cutting systems

Procurement Notes

Verify the component authenticity using official Microchip Technology documentation and datasheets. Confirm that the TO-247 package matches the required mechanical footprint and thermal dissipation specifications for the target application before finalizing procurement decisions.

Selection Notes

Select this component when designing hard-switched applications operating between 25 kHz and 50 kHz at 900 V. Ensure the gate drive circuitry accommodates the specific gate charge requirements of the Power MOS 8™ architecture to maintain optimal switching performance and minimize electromagnetic interference.

Part Context

This part belongs to the Power MOS 8™ IGBT family, which utilizes advanced silicon design and lifetime control processes. It represents an evolution in high-voltage discrete semiconductors, offering superior efficiency compared to previous generation technologies while maintaining robust short-circuit capability.