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Product Detailed Parameters
- Description：IGBT MOD 1200V 64A 284W ISOTOP
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 35A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：ISOTOP
- Supplier Device Package：ISOTOP®
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：64 A
- Power - Max：284 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.24 nF @ 25 V
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Overview
The APT35GP120J is a single IGBT module from Microchip Technology, utilizing Power MOS7 punch-through technology. It features a collector-emitter voltage of 1200 V and is housed in an SOT-227B chassis mount package. The device supports a gate-emitter voltage range of ±30 V and includes integrated protection against short-circuit conditions.
Feature Summary
- Integrates Power MOS7 punch-through IGBT technology for optimized switching performance.
- Incorporates built-in short-circuit protection mechanisms to enhance system reliability.
- Features a rugged SOT-227B chassis mount package designed for robust electrical connections.
Applications
- Industrial motor drives
- Power conversion systems
- Uninterruptible power supplies
Procurement Notes
Verify the specific suffix variant to ensure compatibility with required thermal and electrical specifications. Confirm that the SOT-227B mounting interface matches the application's mechanical constraints. Review the official datasheet for precise thermal resistance values and derating curves to ensure safe operation within the specified temperature limits.
Selection Notes
Select this component when a high-voltage single IGBT with integrated short-circuit protection is required. The SOT-227B package offers a balance between current handling and compactness. Ensure the drive circuit can support the ±30 V gate voltage requirements and that the thermal management solution accommodates the module's power dissipation characteristics.
Part Context
This part belongs to Microchip's Power MOS7 family, which combines IGBT and diode technologies. The SOT-227B form factor is standard for medium-power applications requiring reliable chassis mounting. It serves as a core switching element in circuits demanding high blocking voltages and controlled turn-off behavior.
Replacement Considerations
Cross-reference with other single IGBT modules in the SOT-227B package. Verify that substitute parts match the 1200 V rating and compatible gate drive levels. Check pinout configurations and thermal pad dimensions to ensure physical interchangeability without redesigning the PCB or heatsink interface.
FAQ
What is the maximum gate-emitter voltage rating?
The maximum gate-emitter voltage is rated at ±30 V.
Does the APT35GP120J include short-circuit protection?
Yes, the device incorporates integrated short-circuit protection capabilities.
