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Product Detailed Parameters
- Description：IGBT PT 900V 101A
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：101 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 40A
- Power - Max：543 W
- Switching Energy：795µJ (off)
- Input Type：Standard
- Gate Charge：145 nC
- Td (on/off) @ 25°C：14ns/90ns
- Test Condition：600V, 40A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT40GP90B2DQ2G is a single Insulated Gate Bipolar Transistor (IGBT) from Microchip Technology's POWER MOS 7® series. It features a Planar Trench (PT) structure and Combi design, rated for a maximum collector-emitter voltage of 900 V and a continuous collector current of 40 A. The device is housed in a TO-247-3 package with a maximum power dissipation of 284 W at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.1 V at 40 A and 15 V gate drive, a typical turn-on delay time of 18 ns, and a typical turn-off delay time of 149 ns under test conditions of 600 V, 40 A, and 4.7 Ω. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- POWER MOS 7® technology combining IGBT and Fast Recovery Diode in a single Combi package
- Planar Trench (PT) structure for optimized switching performance and low conduction losses
- High short-circuit capability for robust operation in demanding power applications
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control drives
Procurement Notes
Verify the specific ordering suffix B2DQ2G against the official Microchip datasheet to confirm pinout configuration and packaging details. Ensure that the procurement source provides valid traceability documentation. Confirm RoHS compliance status as per the latest product change notifications. Cross-reference the manufacturer part number with authorized distributor listings to avoid counterfeit components. Validate that the delivered units match the specified TO-247-3 physical dimensions.
Selection Notes
Select this component when a 900 V blocking voltage and 40 A continuous current rating are required in a TO-247-3 package. Consider the 3.1 V saturation voltage for thermal management calculations at full load. Evaluate the switching times against the target application frequency requirements. Compare the total power dissipation capabilities with the available heatsinking solution. Verify compatibility with standard gate drive voltages of 15 V.
Part Context
This device belongs to the APT40GP90 family of high-voltage IGBTs manufactured by Microchip Technology. It utilizes the POWER MOS 7® platform, which integrates advanced trench gate technology. The Combi variant includes an integrated fast recovery diode, simplifying circuit design for half-bridge or full-bridge configurations. It serves as a discrete power switch alternative to larger modules in medium-power applications.
Replacement Considerations
Direct replacements should be sought within the APT40GP90 series or equivalent Microchip POWER MOS 7® devices with matching 900 V/40 A ratings. Verify pinout compatibility for TO-247-3 packages before substitution. Check datasheets for comparable saturation voltages and switching energies to ensure thermal performance parity.
