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Product Detailed Parameters
- Description：IGBT PT MOS 8 COMBI 900 V 43 A T
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT43GA90BSC30 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon Carbide (SiC) technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 900 V and a continuous collector current of 78 A at 25°C. Maximum power dissipation is rated at 337 W, with an operating temperature range from -55°C to +150°C. The gate-emitter voltage limits are specified as ±30 V, and the gate-emitter leakage current is 100 nA.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-performance switching applications.
Applications
- High-voltage power conversion systems requiring SiC IGBTs.
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number with official Microchip Technology documentation. Confirm that the specific suffix corresponds to the TO-247-3 package and SiC technology variant. Ensure compliance with RoHS requirements as indicated in the product specifications before procurement.
Selection Notes
Select this component for designs requiring a 900 V rated single IGBT with high current handling capabilities. Consider the thermal management requirements associated with 337 W power dissipation in a TO-247-3 package. Verify that the system operates within the specified -55°C to +150°C temperature range and respects the ±30 V gate-emitter voltage limits.
Part Context
This part belongs to the Microchip Technology IGBT portfolio, specifically utilizing Silicon Carbide technology. It is distinct from silicon-based variants like the APT43GA90BD30, which shares similar electrical ratings but differs in semiconductor material composition. The TO-247-3 package facilitates through-hole mounting for robust industrial connections.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Evaluate alternatives based on matching 900 V rating, 78 A current capacity, TO-247-3 packaging, and Silicon Carbide technology specifications.
