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Product Detailed Parameters
- Description：IGBT MOD 1200V 75A 329W ISOTOP
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 45A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：ISOTOP
- Supplier Device Package：ISOTOP®
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：329 W
- Current - Collector Cutoff (Max)：500 µA
- Input Capacitance (Cies) @ Vce：3.94 nF @ 25 V
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Overview
The APT45GP120J is a single-channel Power MOS 7 IGBT module manufactured by Microchip Technology. It features a PT (Punch-Through) structure housed in an ISOTOP package with screw mount installation. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. Key electrical parameters include a maximum saturated collector-emitter voltage of 3.9 V at 45 A, input capacitance of 3.94 nF at 25 V, and a maximum power dissipation of 329 W. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- ISOTOP package design for efficient thermal management and compact mounting
- Power MOS 7 technology providing optimized switching performance
- Single configuration suitable for standard inverter legs
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and compliance status. Confirm RoHS3 and REACH alignment with project requirements before procurement. Check for recent Product Change Notifications regarding assembly or labeling updates that may affect integration timelines.
Selection Notes
Select this component for applications requiring a robust single IGBT with high voltage tolerance and moderate current capacity. Ensure the cooling solution can handle up to 329 W of power dissipation. Verify gate drive compatibility with the specified input capacitance and saturation voltage characteristics for optimal switching efficiency.
Part Context
This part belongs to the APT45GP120 family of Power MOS 7 IGBT modules. It shares the ISOTOP form factor with other variants in the series but differs in current rating and internal chip configuration. It serves as a discrete power switching element within larger semiconductor assemblies.
Replacement Considerations
Direct substitutes are not explicitly listed in public distributor data. Evaluate alternatives based on matching 1200 V rating, ISOTOP footprint, and similar Vce(sat) specifications. Cross-reference with Microchip's updated module portfolio for newer generation replacements.
