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Product Detailed Parameters
- Description：IGBT MOD 1200V 150A 680W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：150 A
- Power - Max：680 W
- Current - Collector Cutoff (Max)：2 mA
- Input Capacitance (Cies) @ Vce：6.5 nF @ 25 V
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Overview
The BSM100GD120DN2BOSA1 is a half-bridge Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. It features an N-channel configuration with a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 150 A. The device utilizes the EasyPACK 2B package, designed for flange mounting. Key electrical parameters include a maximum gate-emitter voltage of 20 V and a typical input capacitance of 6.5 nF at 25 V. The module supports a maximum junction temperature of 150°C and includes built-in diodes within its two-element series-connected structure.
Feature Summary
- Half-bridge topology integrating two IGBT elements with built-in diodes
- EasyPACK 2B flange-mount package design
- High thermal performance supporting up to 150°C junction temperature
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact pinout and terminal configuration. Ensure compatibility with existing cooling infrastructure due to the flange-mount requirement. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring a 1200 V rating and 150 A current capacity in a compact form factor. Evaluate thermal management solutions suitable for the EasyPACK 2B footprint. Confirm that the drive circuitry can support the specified gate-emitter voltage limits and switching characteristics.
Part Context
This module belongs to the BSM100 series from Infineon, which offers various voltage ratings and packaging options. The EasyPACK 2B format is widely used in industrial power electronics for its balance of current density and thermal efficiency. It serves as a core switching element in medium-power conversion stages.
Replacement Considerations
Direct substitutes may include other Infineon EasyPACK 2B half-bridge modules with matching 1200 V and 150 A ratings. Verify mechanical dimensions and pin assignments carefully when considering alternatives from different manufacturers.
