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The BSM100GB120DLCKHOSA1 is a dual IGBT module manufactured by Infineon Technologies. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 100 A. The component utilizes the EconoDUAL 4 package, designed for high power density applications. Key electrical parameters include a maximum gate-emitter voltage of ±20 V and a junction temperature range up to 175 °C. The module integrates two N-channel IGBTs with anti-parallel diodes in a single flange-mounted unit.
Verify the exact suffix 'K' and 'HOSA1' against official Infineon documentation to confirm specific tape-and-reel or tray packaging variants. Ensure compatibility with existing gate driver requirements and thermal interface materials before procurement.
Select this module for applications requiring 1200V blocking capability and 100A continuous current handling. Evaluate thermal resistance values against the specific heatsink design to ensure junction temperatures remain within safe operating limits during peak load conditions.
This part belongs to Infineon's BSM series of IGBT modules, specifically utilizing the EconoDUAL form factor. It serves as a power switching component in medium-power conversion circuits, offering a balance between current capacity and physical footprint compared to larger discrete modules.
Direct replacements must match the 1200V/100A rating and EconoDUAL 4 footprint. Verify pinout compatibility and thermal characteristics. Cross-reference with other Infineon BSM100GB120 variants for potential functional equivalence.