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The BSM100GD60DLCBOSA1 is a full-bridge IGBT module from Infineon Technologies, rated at 600 V collector-emitter breakdown voltage and 130 A continuous collector current. It features a maximum power dissipation of 430 W and an on-state collector-emitter saturation voltage of 2.45 V at 15 V gate drive and 100 A. The device includes built-in diodes and has a turn-on time of 36 ns. Designed for chassis mounting, it operates within a junction temperature range of -40°C to +150°C.
Verify the specific suffix BOSA1 against official Infineon documentation to confirm package and tape/reel specifications. Ensure compatibility with existing thermal interface materials and mounting hardware. Cross-reference datasheet parameters such as Vceo and Ic limits with system requirements before procurement.
Select this component for applications requiring a 600V full-bridge IGBT solution with 130A current capacity. Consider the 430W power dissipation rating when designing heat sinks. Verify that the chassis mount form factor fits the mechanical constraints of the target enclosure.
This module belongs to Infineon's low-power ECONO series, designed for compact power electronics. It utilizes Trenchstop technology to optimize switching losses and robustness. The part is intended for use in demanding industrial environments where reliability and thermal performance are critical.
Check for direct substitutes within the BSM100GD60DL series. Verify pinout compatibility and electrical parameter equivalence. Consult Infineon's replacement guide for validated alternative part numbers.