SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BSM100GP60BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, designed for three-phase inverter applications. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 135 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 2.45 V when tested at 15 V gate drive and 100 A collector current. With a maximum power dissipation rating of 420 W, it operates within a junction temperature range of -40°C to +125°C. The component utilizes base mounting installation and includes an integrated NTC thermistor for thermal monitoring.
This component is officially listed as obsolete or end-of-life by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or alternative sourcing channels. Buyers must confirm the specific revision status and ensure compatibility with existing designs before procurement due to the discontinued production status.
Select this module for applications requiring a 600V rated three-phase IGBT solution with high current capacity. Ensure the design accommodates the specified 420W power dissipation and thermal requirements. Verify that the control circuitry supports the required gate drive conditions to achieve the documented saturation voltage characteristics.
The BSM100GP60BOSA1 belongs to the BSM100 series of IGBT modules from Infineon. This series provides standardized solutions for medium-power industrial applications. The part number suffix indicates specific packaging and testing configurations defined by the manufacturer for quality assurance and supply chain tracking.
BSM100GP60