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Product Detailed Parameters
- Description：BSM100GB120 - INSULATED GATE BIP
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The BSM100GB120DLCHOSA1 is a dual IGBT module manufactured by Infineon Technologies. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 150 A at 25°C. The device integrates two series-connected IGBT elements with built-in anti-parallel diodes in a flange-mount package. Key electrical parameters include a maximum gate-emitter voltage of 20 V, a power dissipation capacity of 680 W, and a maximum junction temperature of 150°C. The module utilizes standard silicon technology and is designed for high-power industrial applications requiring robust switching performance.
Feature Summary
- Dual configuration with integrated freewheeling diodes
- High thermal stability up to 150°C junction temperature
- Flange-mount design for efficient heat sinking
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the exact part number suffix HOSA1 against official Infineon documentation to confirm pinout compatibility and specific manufacturing lot requirements. Ensure that the sourcing channel provides valid traceability documents. Cross-reference the datasheet revision date to guarantee alignment with current technical specifications before finalizing procurement orders.
Selection Notes
Select this module for applications requiring a 1200V blocking capability and 150A continuous current handling. Evaluate the thermal resistance characteristics to ensure adequate heatsinking infrastructure is available. Confirm that the gate drive circuitry supports the specified 20V maximum gate-emitter voltage limits to prevent device damage during operation.
Part Context
This component belongs to the BSM100GB120DLC product family from Infineon. The HOSA1 suffix typically denotes a specific packaging or testing variant within the broader series. It shares core electrical characteristics with other variants in the BSM100GB120 line, differing primarily in physical marking or specific quality assurance protocols defined by the manufacturer.
Replacement Considerations
Direct replacements include BSM100GB120DLC and BSM100GB120DN2. Verify mechanical footprint and pin assignment compatibility before substitution. Ensure that the alternative part meets the same 1200V and 150A ratings to maintain system integrity.
