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The BSM100GB120DN2HOSA1 is a half-bridge IGBT power module manufactured by Infineon Technologies. It features an insulated metal base plate and includes fast free-wheeling diodes. The collector-emitter voltage rating is 1200 V, with a DC collector current of 150 A at 25 °C case temperature. The maximum chip temperature is +150 °C, and the storage temperature range spans from -40 °C to +125 °C. Insulation test voltage is rated at 2500 Vac for one minute.
Verify the exact ordering code C67076-A2107-A70 against official Infineon documentation before procurement. Confirm that the HOSA1 suffix aligns with specific manufacturing lot or revision requirements. Ensure compatibility with existing thermal interface materials and mounting hardware specifications.
Evaluate the thermal resistance RthJC of 0.16 K/W for heat sink sizing. Consider the gate threshold voltage range of 4.5 V to 6.5 V for driver compatibility. Assess the switching characteristics under inductive load conditions to determine appropriate gate resistor values for optimal performance.
This component belongs to the BSM series of IGBT modules designed for high-power applications. It represents a legacy product line often utilized in robust industrial environments where proven reliability is critical. The module integrates both switching and freewheeling elements into a single compact package.
Direct substitutes within the same family include the BSM100GB120DN2. Verify pinout compatibility and electrical parameters when considering alternative packages or updated generations from the manufacturer.