BSM100GB120DN2KHOSA1

Overview

The BSM100GB120DN2KHOSA1 is a half-bridge IGBT power module manufactured by Infineon Technologies. It integrates two N-channel insulated gate bipolar transistors with built-in fast free-wheeling diodes in a flange mount package with an insulated metal base plate. The device supports a collector-emitter voltage of 1200 V and a DC collector current of 145 A at 80 °C case temperature. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical gate threshold voltage of 5.5 V, and a maximum collector-emitter saturation voltage of 3.7 V at 100 A. Switching characteristics are defined by turn-on delay times up to 260 ns and fall times up to 100 ns under specified test conditions.

Feature Summary

• Half-bridge topology integrating two IGBTs with fast recovery free-wheeling diodes
• Insulated metal base plate for effective thermal management and electrical isolation
• High short-circuit capability supporting safe operation under fault conditions

Applications

• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify the specific ordering code C67070-A2107-A70 against official Infineon or EUPEC documentation to confirm availability and exact specifications. Ensure that the component meets all required insulation test voltages and thermal resistance limits for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this module based on its 1200 V blocking voltage and 145 A continuous current rating at elevated temperatures. Consider the thermal resistance values and the need for appropriate gate drive voltages within the ±20 V limit. Evaluate the switching speed requirements against the provided delay and fall time parameters to ensure compatibility with the system's frequency and load conditions.

Part Context

This component belongs to the BSM series of IGBT modules originally developed by EUPEC and subsequently acquired by Infineon Technologies. The 'K' suffix typically denotes specific internal variations within the DN2 family, while 'HOSA1' indicates a particular manufacturing or packaging variant. This lineage places the device within high-power industrial semiconductor solutions designed for robust performance.

Replacement Considerations

Direct replacements must match the half-bridge configuration, 1200 V rating, and similar current capabilities. Verify pinout compatibility and thermal interface dimensions. Cross-reference datasheets for equivalent models such as those from the BSM100GD or BSM150GB series if current ratings allow.