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The BSM100GB120DN2FE325HOSA1 is a high-power IGBT module manufactured by Infineon Technologies. It features a full-bridge configuration with a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 100 A at 25°C. The device utilizes standard gate input characteristics and is designed for baseplate mounting to facilitate thermal management in industrial power conversion systems.
Verify the complete part number against official Infineon documentation to ensure compatibility with specific application requirements. Confirm that the suffix matches the intended qualification level and packaging specifications before procurement, as variations exist within the product family.
Select this component for applications requiring a 1200 V rated full-bridge IGBT solution with a 100 A current capacity. Ensure the system design accommodates the required thermal dissipation through an appropriate heatsink interface compatible with the module's baseplate mounting structure.
This module belongs to the BSM100 series from Infineon, which provides standardized solutions for medium-power industrial applications. The series is characterized by reliable performance in high-voltage environments, supporting various power electronics designs across different sectors.
Direct replacements must match the 1200 V / 100 A full-bridge specification. Verify pinout compatibility and thermal resistance parameters when considering alternative manufacturers or updated generations within the same product line.