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The APT46GA90JD40 is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 900 V and a continuous collector current of 87 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.5 V and a gate-emitter leakage current of 100 nA. Maximum power dissipation is rated at 284 W, with an operating temperature range from -55°C to +150°C. The component is housed in an SOT-227-4 package, also identified as ISOTOP, designed for screw mount installation.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status through the latest product change notifications or regulatory documentation provided by Microchip Technology prior to finalizing procurement orders.
Select this component based on the required 900 V blocking capability and 87 A continuous current rating. Ensure the application circuit supports the specified 2.5 V saturation voltage for optimal conduction losses. Verify that the mechanical design accommodates the SOT-227-4 footprint and provides adequate thermal resistance for the 284 W power dissipation limit.
This part belongs to the APT series of discrete and module IGBTs from Microchip Technology. It represents a silicon-based solution distinct from the company's silicon carbide offerings, such as the APT43GA90BSC30. The ISOTOP packaging family is commonly used in medium-power industrial applications requiring robust thermal performance.
Direct replacements must match the 900 V / 87 A specification and SOT-227-4 form factor. Cross-reference with other Microchip APT46GA90 variants or equivalent modules from IXYS and STMicroelectronics listed in the same voltage and current class, ensuring identical pin compatibility.