APT50GP60LDLG

$9.13

Description：IGBT PT 600V 150A TO-264
Series：-

SKU:5f1cfb24ee6a Category: Single IGBTs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT PT 600V 150A TO-264
Series：-
Mfr：Microsemi Corporation
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：190 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 50A
Power - Max：625 W
Switching Energy：456µJ (on), 635µJ (off)
Input Type：Standard
Gate Charge：165 nC
Td (on/off) @ 25°C：19ns/85ns
Test Condition：400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264
Grade：-
Qualification：-

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APT50GP60LDLG

Overview

The APT50GP60LDLG is a single Insulated Gate Bipolar Transistor (IGBT) from the POWER MOS 7 series, manufactured by Microsemi Corporation. It utilizes Punch-Through (PT) technology and is housed in a TO-264 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 150 A. It supports a maximum power dissipation of 625 W and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

POWER MOS 7 technology for optimized switching performance
Punch-Through (PT) structure for robust voltage blocking
Standard gate input configuration
Lead-free and RoHS compliant construction

Applications

Industrial motor drives
Uninterruptible Power Supplies (UPS)
High-frequency inverters

Procurement Notes

Verify the manufacturer origin, as Microsemi's semiconductor assets were acquired by Microchip Technology. Confirm the specific suffix 'LDLG' corresponds to the TO-264 package variant with lead-free compliance. Ensure the component matches the official datasheet specifications for voltage, current, and thermal ratings before integration into designs.

Selection Notes

Select this component for applications requiring high current handling up to 150 A and voltage ratings of 600 V. The TO-264 package provides effective thermal management for power dissipation up to 625 W. Consider the switching energy characteristics and gate charge requirements when designing drive circuits for optimal efficiency.

Part Context

This IGBT belongs to the POWER MOS 7 family, representing an evolution in trench gate technology. It offers improved switching speed and lower conduction losses compared to previous generations. The PT design ensures stable operation under high voltage conditions, making it suitable for demanding power electronics environments.

Replacement Considerations

Direct substitutes include other 600V 150A PT IGBTs in TO-264 packages from the same manufacturer family. Verify pinout compatibility and thermal resistance parameters when considering alternative part numbers.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.