APT50GT120B2RDLG

$16.12

Description：IGBT NPT 1200V 106A
Series：Thunderbolt IGBT®

SKU:b77e539d9c34 Category: Single IGBTs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 106A
Series：Thunderbolt IGBT®
Mfr：Microsemi Corporation
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：106 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 50A
Power - Max：694 W
Switching Energy：3585µJ (on), 1910µJ (off)
Input Type：Standard
Gate Charge：240 nC
Td (on/off) @ 25°C：23ns/215ns
Test Condition：800V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：-
Grade：-
Qualification：-

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APT50GT120B2RDLG

Overview

The APT50GT120B2RDLG is a single NPT IGBT manufactured by Microsemi Corporation. It features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 106 A. The device is housed in a TO-247-3 variant package designed for through-hole mounting. Maximum power dissipation is rated at 694 W, with an operating junction temperature range spanning from -55°C to 150°C.

Feature Summary

NPT technology construction
Resonant mode operation capability

Applications

High-power switching applications
Industrial motor drives
Power supply inverters

Procurement Notes

Verify the specific manufacturer designation, as Microsemi assets were acquired by Microchip Technology. Confirm RoHS compliance status and lead-free certification against the latest official datasheet documentation before procurement. Ensure the TO-247-3 variant package matches the required PCB footprint and thermal management specifications for the target application design.

Selection Notes

Select this component for high-voltage applications requiring robust NPT technology and high current handling capabilities up to 106 A. The wide operating temperature range supports demanding thermal environments. Evaluate the 694 W power dissipation rating against the system's thermal resistance and cooling requirements to ensure reliable long-term operation within the specified junction temperature limits.

Part Context

This component belongs to the single IGBT category, utilizing Non-Punch Through (NPT) technology. It is designed for high-power switching applications where high voltage blocking and significant current capacity are required. The TO-247-3 package provides a standard form factor for through-hole mounting in industrial and power electronics systems.