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The APT50GT120B2RG is a single NPT IGBT from Microchip Technology, designed for medium frequency applications. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 94 A at 25°C. The device operates within a temperature range of -55°C to +150°C and offers a power dissipation capacity of 625 W. Packaged in a TO-247-3 through-hole configuration, it utilizes silicon technology.
Verify the specific datasheet version for the APT50GT120B2RG to confirm exact electrical characteristics and thermal resistance values. Ensure that the procurement channel provides official Microchip Technology documentation. Cross-reference the TO-247-3 package dimensions with your PCB layout requirements before finalizing orders.
Select this component for circuits requiring high voltage blocking and robust current handling in medium frequency environments. The TO-247-3 package facilitates efficient heat dissipation for through-hole implementations. Evaluate the 94 A current rating against peak load demands to ensure reliable operation under thermal constraints.
This discrete IGBT belongs to Microchip's Thunderbolt series, focusing on high-performance switching solutions. It serves as a fundamental active switch in power electronics, distinct from integrated modules. The NPT structure provides a balance between conduction losses and switching performance for industrial power conversion tasks.
The maximum collector-emitter breakdown voltage is 1200 V.
The APT50GT120B2RG utilizes Non-Punch-Through (NPT) technology.