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Product Detailed Parameters
- Description：IGBT MOD 1200V 72A 379W ISOTOP
- Series：Thunderbolt IGBT®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：ISOTOP
- Supplier Device Package：ISOTOP®
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：72 A
- Power - Max：379 W
- Current - Collector Cutoff (Max)：400 µA
- Input Capacitance (Cies) @ Vce：2.5 nF @ 25 V
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Overview
The APT50GT120JRDQ2 is a Thunderblot IGBT featuring Non-Punch Through technology and an integrated gate resistor. It operates with a collector-emitter voltage of 1200 V and a continuous collector current of 72 A at 25°C case temperature. The device has a maximum power dissipation of 379 W and includes an ultrafast soft recovery anti-parallel diode. Packaged in a SOT-227 (ISOTOP) configuration, it supports screw mounting and functions within a junction temperature range of -55°C to 150°C.
Feature Summary
- Thunderblot IGBT architecture utilizing Non-Punch Through technology for superior ruggedness and switching speed.
- Integrated gate resistor designed to minimize electromagnetic interference and enhance reliability.
- Ultrafast soft recovery anti-parallel diode providing low tail current and low leakage characteristics.
Applications
- High frequency switching applications up to 50 kHz
- Inductive switching circuits requiring robust safe operating area ratings
- Power conversion systems utilizing clamped inductive load testing conditions
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before implementation. Confirm that the SOT-227 package dimensions align with the intended PCB footprint and thermal management requirements. Ensure handling procedures account for electrostatic discharge sensitivity as specified in the component guidelines.
Selection Notes
Select this component when high voltage isolation and fast switching are required in a single package. The integrated gate resistor simplifies driver design by reducing external component count. Evaluate thermal impedance curves to ensure adequate heat sinking for the target duty cycle and ambient conditions.
Part Context
This part belongs to the Thunderblot IGBT family from Microchip Technology. It combines a high-voltage N-channel IGBT with an anti-parallel diode in an ISOTOP package. The series is engineered for medium to high-power applications demanding low conduction losses and high switching frequencies.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the function of the integrated gate resistor?
The integrated gate resistor is included to reduce electromagnetic interference (EMI) and improve overall device reliability during switching operations.
How is the switching safe operating area defined?
The Switching Safe Operating Area (SSOA) is rated at 150 A @ 1200 V with a junction temperature of 150°C, tested under clamped inductive switching conditions.
What technology does the Thunderblot IGBT utilize?
It utilizes Non-Punch Through (NPT) technology, which provides superior ruggedness and ultrafast switching speeds compared to standard designs.
