Single FETs, MOSFETs APT55M65JFLL product image

APT55M65JFLL

$28.78
  • Description:MOSFET N-CH 550V 63A ISOTOP
  • Series:POWER MOS 7®
  • Mfr:Microsemi Corporation
  • Package:Tube

SKU:77b34ab6aaed Category: Brand:

  
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APT55M65JFLL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 550V 63A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT55M65JFLL

  • Description:MOSFET N-CH 550V 63A ISOTOP
  • Series:POWER MOS 7®
  • Mfr:Microsemi Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):550 V
  • Current - Continuous Drain (Id) @ 25°C:63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:65mOhm @ 31.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:205 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:9165 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):595W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:ISOTOP®
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT55M65JFLL

APT55M65JFLL

Single FETs, MOSFETs Overview

The APT55M65JFLL is a Power MOS 7 N-Channel enhancement mode power MOSFET in an ISOTOP SOT-227 package. It features a drain-source breakdown voltage of 550V and a continuous drain current of 63A at 25°C case temperature. The maximum on-state resistance is 0.065Ω at VGS=10V and ID=31.5A. Total power dissipation is 595W at 25°C with a linear derating factor of 4.76 W/°C. Operating junction temperature ranges from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Power MOS 7 technology combines low conduction losses with fast switching speeds via a patented metal gate structure.
  • ISOTOP SOT-227 package provides increased power dissipation capabilities and facilitates easier thermal management.
  • Fast recovery body diode supports high peak diode recovery dv/dt performance.

Single FETs, MOSFETs Applications

  • High frequency switching power supplies
  • Motor control applications
  • DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix JFLL against official Microchip documentation to confirm exact packaging and handling specifications. Ensure electrostatic discharge precautions are followed during assembly, as these devices are sensitive to static damage. Confirm that the sourcing channel provides valid traceability for this component.

Single FETs, MOSFETs Selection Notes

Select this component when a 550V rating and 63A continuous current capability are required in a base-mount configuration. The low gate charge and input capacitance facilitate easier driving compared to previous generations. Evaluate thermal impedance requirements against the specified junction-to-case resistance for the target application environment.

Single FETs, MOSFETs Part Context

This device belongs to the Advanced Power Technology (APT) Power MOS 7 series, now manufactured by Microchip. It utilizes advanced planar trench technology to achieve superior performance metrics relative to standard MOSFETs. The ISOTOP package design allows for direct mounting to heatsinks for efficient heat transfer.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip cross-reference lists for verified substitutes. Generic replacements may not match the specific RDS(on), Qg, or thermal characteristics of the original part.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy?

The single pulse avalanche energy is rated at 3200 mJ starting at Tj = +25°C.

How does the source-drain diode perform?

The fast recovery body diode has a typical reverse recovery time of 300 ns at Tj = 25°C and 600 ns at Tj = 125°C.

APT55M65JFLLAPT55M65JFLL
$28.78
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