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APT60D120SG
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Product Detailed Parameters
- Description：DIODE STANDARD 1200V 60A D3PAK
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：60A
- Voltage - Forward (Vf) (Max) @ If：2.5 V @ 60 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：400 ns
- Current - Reverse Leakage @ Vr：250 µA @ 1200 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：D3PAK
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The APT60D120SG is a 1200V, 60A single-polarity IGBT module from Microchip Technology's ANE series. It utilizes Field-Stop Trench technology to achieve low conduction and switching losses. The device features an anti-parallel diode with optimized recovery characteristics for efficient operation in hard-switching applications. Packaged in the TO-247AD form factor, it provides robust thermal performance and electrical isolation suitable for industrial power conversion systems.
Feature Summary
- Field-Stop Trench IGBT technology for reduced switching energy
- Integrated fast recovery anti-parallel diode
- High short-circuit withstand capability
- Optimized for high-frequency hard-switching operations
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the specific suffix code against official Microchip documentation to confirm exact electrical parameters and packaging specifications. Ensure compatibility with existing thermal management solutions and gate drive requirements before procurement. Cross-reference datasheet revisions to confirm current manufacturing status and availability constraints.
Selection Notes
Select this component for applications requiring high voltage blocking and moderate current handling in compact packages. Evaluate thermal resistance values against system heat sink capabilities. Confirm that the gate threshold voltage aligns with available driver outputs. Assess switching frequency limits based on total power dissipation requirements.
Part Context
This module belongs to Microchip's ANE series of single-polarity IGBT modules. The series emphasizes efficiency improvements through advanced trench gate technology. These components are designed to replace older generation planar devices in demanding power electronics environments where size and loss reduction are critical design factors.
Replacement Considerations
Consult official substitution lists for direct equivalents. Verify pinout compatibility and thermal interface dimensions when considering alternative manufacturers. Ensure voltage and current ratings meet or exceed original design specifications during any cross-brand replacement analysis.
