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The APT60GF120JRDQ3 is a single NPT (Non-Punch-Through) IGBT module manufactured by Microchip Technology. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 149 A at 25°C. The device is housed in an ISOTOP package with screw mount installation. Key electrical parameters include a maximum power dissipation of 625 W, a gate-emitter leakage current of 100 nA, and a maximum operating temperature of +150°C. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix Q3 against official Microchip documentation to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides valid traceability records. Confirm that the ISOTOP package dimensions match the target heatsink interface requirements prior to ordering.
Select this component when a 1200 V rating and 149 A continuous current are required in a single-chip configuration. The NPT structure offers superior short-circuit withstand capability compared to punch-through designs. Consider the 625 W power dissipation limit and the necessity for adequate thermal management solutions compatible with the ISOTOP form factor.
This part belongs to Microchip's discrete IGBT module portfolio, specifically the Combi series designed for medium to high-power applications. It complements other variants in the APT60GF family by offering specific voltage and current ratings tailored for industrial power conversion systems requiring reliable switching performance.
APT60GF120JRD is a comparable variant within the same product line. Verify if the base model meets all electrical and mechanical specifications before substitution.