ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
APT60M80L2VRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 65A 264 MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT60M80L2VRG
- Description：MOSFET N-CH 600V 65A 264 MAX
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：590 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：13300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：833W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：264 MAX™ [L2]
- Package / Case：TO-264-3, TO-264AA
Single FETs, MOSFETs datasheet and documents for APT60M80L2VRG
Single FETs, MOSFETs Overview
The APT60M80L2VRG is a through-hole N-channel Power MOS V® technology MOSFET manufactured by Microchip Technology. It features a 600V drain-source voltage rating and a continuous drain current of 65A at case temperature. The device has a maximum power dissipation of 833W at case temperature and utilizes the 264 MAX™ [L2] package (TO-264-3). Key electrical parameters include an 80mΩ maximum on-resistance at 10V gate drive, a 4V maximum gate threshold voltage, and a 590nC maximum gate charge.
Single FETs, MOSFETs Feature Summary
- N-channel silicon MOSFET construction utilizing Power MOS V® technology for optimized performance
- Through-hole mounting configuration designed for robust mechanical attachment
- High thermal capability with specified power dissipation ratings under case temperature conditions
Single FETs, MOSFETs Applications
- Industrial motor control systems
- Power supply switching applications
- General purpose high-voltage switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix VRG against official Microchip documentation to confirm compliance with RoHS directives and halogen-free status. Confirm that the TO-264AA physical dimensions match the target PCB footprint requirements. Ensure the ordering part number aligns exactly with the required packaging format as listed in the manufacturer's current catalog.
Single FETs, MOSFETs Selection Notes
Select this component when a 600V blocking voltage and moderate current handling are required for through-hole implementations. Evaluate the 80mΩ on-resistance against thermal management constraints to ensure junction temperatures remain within the -55°C to 150°C operating range during continuous operation.
Single FETs, MOSFETs Part Context
This device belongs to the APT60M80 series from Microchip Technology, representing discrete power transistors designed for medium-power applications. The series emphasizes reliability in industrial environments, offering a balance between conduction losses and switching characteristics suitable for standard frequency operations.
Single FETs, MOSFETs Replacement Considerations
Consult official Microchip cross-reference guides for verified substitutes. Ensure any replacement maintains identical voltage, current, and package specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
