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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APT64GA90B is a single IGBT from Microchip Technology's POWER MOS 8 family, utilizing Planar Trench technology. It features a 900 V collector-emitter breakdown voltage and a continuous collector current of 117 A at 25°C. The device has a maximum power dissipation of 500 W and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-264-3 (TO-264) through-hole housing, it offers a typical saturated collector-emitter voltage of 2.5 V.
Verify the specific suffix against official datasheets to confirm package type and electrical characteristics. Ensure compatibility with existing thermal management systems given the 500 W dissipation rating. Confirm RoHS compliance status via the manufacturer's documentation before integration.
Select this component for designs requiring 900 V blocking capability and high current handling up to 117 A. Evaluate gate drive requirements against the specified input capacitance and charge values. Ensure the PCB layout supports the TO-264 package dimensions and thermal pad requirements for effective heat sinking.
This part belongs to the APT series of discrete IGBTs manufactured by Microchip Technology. It is designed as a replacement or upgrade for older generation devices in high-voltage power conversion applications, offering improved efficiency through advanced trench gate architecture compared to previous planar technologies.