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Product Detailed Parameters
- Description：IGBT NPT 1200V 160A TO-247
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：160 A
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 70A
- Power - Max：961 W
- Switching Energy：3.82mJ (on), 2.58mJ (off)
- Input Type：Standard
- Gate Charge：544 nC
- Td (on/off) @ 25°C：33ns/278ns
- Test Condition：600V, 70A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The APT70GR120B2 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology, belonging to the GenX3 family. It features a trench gate and field-stop technology designed for low conduction and switching losses. The device is rated for a maximum collector-emitter voltage of 1200V and a continuous collector current of 70A at 25°C. It utilizes a TO-247-3 package, providing robust thermal performance for industrial power applications.
Feature Summary
- GenX3 trench gate and field-stop IGBT technology
- Low forward voltage drop for reduced conduction losses
- Soft recovery characteristics compatible with fast diodes
- High short-circuit withstand capability
Applications
- Industrial motor drives and inverters
- Switched-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify the specific suffix 'B2' against the official Microchip datasheet to confirm pinout configuration and packaging details, as suffixes often denote specific mechanical or electrical variations. Ensure the component matches the required RoHS compliance status for your target market regulations before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring a balance of low on-state voltage and manageable switching speeds in the 1200V class. Consider the thermal resistance values provided in the datasheet for heatsink sizing. Verify that the gate drive voltage requirements align with standard ±15V driving schemes typical for this transistor family.
Part Context
This IGBT is part of Microchip's broader portfolio of power semiconductors, specifically the GenX3 series which succeeded earlier generations like the Gen3. It serves as a direct replacement for older 70A/1200V discrete IGBTs in legacy designs, offering improved efficiency and reliability metrics compared to previous generation devices within the same current and voltage rating bracket.
Replacement Considerations
Direct replacements may include the APT70GR120J or other GenX3 variants with identical pinouts. Verify that substitute parts maintain the same Vce(sat) and switching energy parameters to ensure circuit performance stability without redesigning the gate drive or snubber networks.
