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The APT75GN120JDQ3G is a single IGBT module manufactured by Microsemi Corporation, utilizing Trench Field Stop technology. It features a 1200V collector-emitter breakdown voltage and a continuous collector current of 124A at 25°C. The device is housed in an ISOTOP package with screw mount installation. Key electrical parameters include a maximum power dissipation of 379W and a gate-emitter maximum voltage of 20V. Operating temperatures range from -55°C to +150°C.
Verify the specific manufacturer designation and component authenticity prior to acquisition. Confirm that the part number matches the exact suffix requirements for your design. Ensure compatibility with existing thermal management solutions. Check for any obsolescence notices or lifecycle changes from the supplier. Validate that the package type aligns with your mechanical constraints.
Consider the thermal resistance characteristics when designing heat sinks for this module. Evaluate the gate drive requirements against the specified maximum voltage limits. Assess the continuous current rating against peak load demands in the target application. Ensure the mounting hardware supports the screw mount style effectively. Review the junction temperature limits for long-term reliability.
This component belongs to the Microsemi IGBT module family, specifically designed for power electronics. It represents a discrete semiconductor solution for controlling high currents and voltages. The ISOTOP packaging provides a standardized form factor for integration into various power modules and inverters.
APT75GN120JDQ3G is listed as discontinued at major distributors. Verify availability through authorized channels or consider equivalent models from the same manufacturer if available. Cross-reference technical specifications carefully before substituting with other brands.