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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APT75GN60LDQ3G is a single IGBT from Microchip Technology, utilizing Fieldstop Low Frequency Combi technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (IC) of 75 A at 25°C. The device is housed in a TO-264 package with screw mount installation. Key electrical parameters include a collector-emitter saturation voltage (VCEsat) of 1.5 V at 15 V gate drive and 50 A, and a gate-emitter leakage current of 600 nA. The power dissipation (Pd) is rated at 250 W, with an operating temperature range from -40°C to +100°C.
Verify the specific suffix Q3G against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status through manufacturer documentation. Check lead times as production cycles may vary. Ensure the TO-264 package dimensions match your PCB layout requirements before ordering.
Select this component for applications requiring 600 V blocking capability and up to 75 A continuous current. The TO-264 package offers a balance between current handling and mounting simplicity. Consider the 1.5 V VCEsat for conduction loss calculations. Verify that the 250 W power dissipation rating aligns with your thermal management strategy.
This part belongs to Microchip's APT series of IGBT modules, specifically designed for general-purpose power switching. The Fieldstop technology distinguishes it from older trench designs, offering improved ruggedness. It serves as a discrete solution within the broader portfolio of power semiconductor devices offered by the manufacturer.
Direct substitutes must match the 600 V / 75 A / TO-264 specification. Compare VCEsat and switching times with alternatives like the APT200GN60J if higher current is acceptable. Verify pin compatibility before swapping to ensure no redesign is needed.